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Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon films

Ray, SC, Bao, CW, Tsai, HM, Chiou, JW, Jan, JC, Kumar, KPK, Pong, WF, Tsai, MH, Wang, WJ, Hsu, CJ, Okpalugo, TIT, Papakonstantinou, P and McLaughlin, JAD (2004) Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon films. Applied Physics Letters, 85 (18). pp. 4022-4024. [Journal article]

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URL: http://dx.doi.org/10.1063/1.1812594

DOI: doi:10.1063/1.1812594


This work investigates the C K-edge x-ray absorption near-edge structure (XANES), valence-band photoelectron spectroscopy (PES), and Fourier transform infrared (FTIR) spectra of Si-doped hydrogenated amorphous carbon films. The C K-edge XANES and valence-band PES spectra indicate that the sp2/sp3 population ratio decreases as the amount of tetramethylsilane vapor precursor increases during deposition, which suggest that Si doping% enhances sp3 and reduces sp2-bonding configurations. FTIR spectra show the formation of a polymeric sp3 C-Hn structure and Si-Hn bonds, which causes the Young's modulus and hardness of the films to decrease with the increase of the Si content. Copyright American Institute of Physics 2004

Item Type:Journal article
Keywords:diamond-like carbon, hydrogen, silicon, thin films, amorphous state, XANES, valence bands, Young's modulus, hardness, impurity distribution, infrared spectra, Fourier transform spectra, photoelectron spectroscopy
Faculties and Schools:Faculty of Computing & Engineering
Faculty of Computing & Engineering > School of Engineering
Research Institutes and Groups:Engineering Research Institute
Engineering Research Institute > Nanotechnology & Integrated BioEngineering Centre (NIBEC)
ID Code:1249
Deposited By: Mrs Ann Blair
Deposited On:27 Nov 2009 13:53
Last Modified:17 Oct 2017 15:34

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