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Carbon nanotube growth activated by quantum-confined silicon nanocrystals

Mariotti, D, Svrcek, V, Mathur, A, Dickinson, C, Matsubara, K and Kondo, M (2013) Carbon nanotube growth activated by quantum-confined silicon nanocrystals. Journal of Physics D: Applied Physics, 46 (12). p. 122001. [Journal article]

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URL: http://stacks.iop.org/0022-3727/46/i=12/a=122001

Abstract

We report on the use of silicon nanocrystals (Si-ncs) to activate nucleation and growth of carbon nanotubes (CNTs) without using any metal catalyst. Si-ncs with different surface characteristics have been exposed to the same CH 4 low-pressure plasma treatment producing quite different results. Specifically, Si-ncs prepared by laser ablation in water have contributed to the formation of micrometre-sized silicon spherical particles. On the other hand, Si-ncs prepared by electrochemical etching did not induce any specific growth while the third type of Si-ncs, prepared by electrochemical etching and treated by a laser fragmentation process, induced the growth of multi-walled CNTs. The different outcomes of the same plasma process are attributed to the diverse surface features presented by the Si-ncs.

Item Type:Journal article
Faculties and Schools:Faculty of Computing & Engineering
Faculty of Computing & Engineering > School of Engineering
Research Institutes and Groups:Engineering Research Institute
Engineering Research Institute > Nanotechnology & Integrated BioEngineering Centre (NIBEC)
ID Code:25027
Deposited By: Professor Davide Mariotti
Deposited On:27 Feb 2013 09:22
Last Modified:17 Oct 2017 16:07

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