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Dramatic Enhancement of Photoluminescence Quantum Yields for Surface-Engineered Si Nanocrystals within the Solar Spectrum

Svrcek, V, Dohnalova, K, Mariotti, D, Trinh, MT, Limpens, R, Mitra, S, Gregorkiewicz, T, Matsubara, K and Kondo, M (2013) Dramatic Enhancement of Photoluminescence Quantum Yields for Surface-Engineered Si Nanocrystals within the Solar Spectrum. Advanced Functional Materials, 23 (48). pp. 6051-6058. [Journal article]

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URL: http://dx.doi.org/10.1002/adfm.201301468

DOI: 10.1002/adfm.201301468

Abstract

Substantial improvements of the absolute photoluminescence quantum yield (QY) for surfactant-free silicon nanocrystals (Si-ncs) by atmospheric pressure microplasma 3-dimensional surface engineering are reported. The effect of surface characteristics on carrier multiplication mechanisms is explored using transient induced absorption and photoluminescence QY. Surface engineering of Si-ncs is demonstrated to lead to more than 120 times increase in the absolute QY (from 0.1% up to 12%) within an important spectral range of the solar emission (2.3�3 eV). The Si-ncs QY is shown to be stable when Si-ncs are stored in ethanol at ambient conditions for three months.

Item Type:Journal article
Keywords:solar cells, nanocrystals, carrier multiplication, semiconductors
Faculties and Schools:Faculty of Computing & Engineering
Faculty of Computing & Engineering > School of Engineering
Research Institutes and Groups:Engineering Research Institute
Engineering Research Institute > Nanotechnology & Integrated BioEngineering Centre (NIBEC)
ID Code:28408
Deposited By: Professor Davide Mariotti
Deposited On:12 Feb 2014 13:27
Last Modified:25 Mar 2015 15:47

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