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Electrical and electronic properties of nitrogen doped amorphous carbon (a-CNx) thin films

Ray, SC, Mbiombi, W and Papakonstantinou, P (2014) Electrical and electronic properties of nitrogen doped amorphous carbon (a-CNx) thin films. Current Applied Physics, 14 . pp. 1845-1848. [Journal article]

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URL: http://www.sciencedirect.com/science/article/pii/S1567173914003319

DOI: doi:10.1016/j.cap.2014.10.016

Abstract

Nitrogen-doped amorphous carbon thin films (a-CNx) were prepared on silicon substrate by pulsed laser deposition process using methane (CH4) and nitrogen (N2) as source gas. The electrical properties of a- CNx films changes with nitrogen concentration in the film structure. The intensity ratio of the D and G peak (ID/IG) increases with higher nitrogen concentration, which means that sp2-clusters were formed in these films and is responsible for the enhancement of conductivity of the a-CNx films. We observed that the amorphous carbon (a-C) films becoming more graphitic in nature yielding higher conductivity/lower resistivity with increase of nitrogen concentration. Electron field emission result shows that the emission current density enhances with nitrogen doping that indicates the useful in electron field emission devices application.

Item Type:Journal article
Keywords:a-CNx thin film; Resistivity; Electron field emission; Raman spectroscopy
Faculties and Schools:Faculty of Computing & Engineering
Faculty of Computing & Engineering > School of Engineering
Research Institutes and Groups:Engineering Research Institute
Engineering Research Institute > Nanotechnology & Integrated BioEngineering Centre (NIBEC)
ID Code:31749
Deposited By: Professor Pagona Papakonstantinou
Deposited On:08 Jun 2015 13:02
Last Modified:17 Oct 2017 16:18

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