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Varying Surface Chemistries for p-Doped and n-Doped Silicon Nanocrystals and Impact on Photovoltaic Devices

Velusamy, Tamilselvan, Mitra, Somak, Macias-Montero, Manuel, Svrcek, Vladimir and Mariotti, D (2015) Varying Surface Chemistries for p-Doped and n-Doped Silicon Nanocrystals and Impact on Photovoltaic Devices. ACS Applied Materials & Interfaces, 7 (51). pp. 28207-28214. [Journal article]

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URL: http://dx.doi.org/10.1021/acsami.5b06577

DOI: 10.1021/acsami.5b06577

Abstract

Doping of quantum confined nanocrystals offers unique opportunities to control the bandgap and the Fermi energy level. In this contribution, boron-doped (p-doped) and phosphorus-doped (n-doped) quantum confined silicon nanocrystals (SiNCs) are surface-engineered in ethanol by an atmospheric pressure radio frequency microplasma. We reveal that surface chemistries induced on the nanocrystals strongly depend on the type of dopants and result in considerable diverse optoelectronic properties (e.g., photoluminescence quantum yield is enhanced more than 6 times for n-type SiNCs). Changes in the position of the SiNCs Fermi levels are also studied and implications for photovoltaic application are discussed.

Item Type:Journal article
Keywords:p/n-SiNCs, surface engineering, surface chemistry, quantum yield, Fermi level, PV device
Faculties and Schools:Faculty of Computing & Engineering
Faculty of Computing & Engineering > School of Engineering
Research Institutes and Groups:Engineering Research Institute
Engineering Research Institute > Nanotechnology & Integrated BioEngineering Centre (NIBEC)
ID Code:33392
Deposited By: Professor Davide Mariotti
Deposited On:01 Mar 2016 09:25
Last Modified:01 Mar 2016 09:25

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