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Energy band diagram of device-grade silicon nanocrystals

Macias-Montero, Manuel, Askari, S., Mitra, S., Rocks, C., Ni, C, Svrcek, V., Connor, P. A., Maguire, P, Irvine, J. T. S. and Mariotti, D (2016) Energy band diagram of device-grade silicon nanocrystals. Nanoscale, 8 . pp. 6623-6628. [Journal article]

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URL: http://dx.doi.org/10.1039/C5NR07705B

DOI: 10.1039/C5NR07705B

Abstract

Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.

Item Type:Journal article
Keywords:silicon nanocrystals, plasma
Faculties and Schools:Faculty of Computing & Engineering
Faculty of Computing & Engineering > School of Engineering
Research Institutes and Groups:Engineering Research Institute
Engineering Research Institute > Nanotechnology & Integrated BioEngineering Centre (NIBEC)
ID Code:34503
Deposited By: Professor Davide Mariotti
Deposited On:03 May 2016 08:39
Last Modified:06 Sep 2017 16:25

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