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Substrate effects on the microstructure of hydrogenated amorphous carbon films

Ahmad, I, Roy, SS, Rahman, MdA, Okpalugo, TIT, Maguire, PD and McLaughlin, JAD (2009) Substrate effects on the microstructure of hydrogenated amorphous carbon films. CURRENT APPLIED PHYSICS, 9 (5). pp. 937-942. [Journal article]

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URL: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6W7T-4TJ6FJ6-1-F&_cdi=6635&_user=126978&_orig=search&_coverDate=09%2F30%2F2009&_sk=999909994&view=c&wchp=dGLbVtb-zSkzk&md5=853c30212c26883da3d286ddf1a2673e&ie=/sdarticle.pdf

DOI: 10.1016/j.cap.2008.09.006


In this work, plasma enhanced chemical vapour deposition was used to prepare hydrogenated amorphous carbon films (a-C:H) on different substrates over a wide range of thickness. In order to observe clear substrate effect the films were produced under identical growth conditions. Raman and near edge X-ray absorption fine structure (NEXAFS) spectroscopies were employed to probe the chemical bonding of the films. For the films deposited on silicon substrates, the Raman WIG ratio and G-peak positions were constant for most thickness. For metallic and polymeric substrates, these parameters increased with Him thickness, suggesting a change from a sp(3)-bonded hydrogenated structure to a more sp(2) network, NEXAFS results also indicate a higher sp(2) content of a-C:H films grown on metals than silicon. The metals, which are poor carbide precursors, gave carbon films with low adhesion, easily delaminated from the substrate. The delamination can be decreased/eliminated by deposition of a thin (similar to 10 nm) silicon layer on stainless steel substrates prior to a-C:H coatings. Additionally we noted the electrical resistivity decreased with thickness and higher dielectric breakdown strength for a-C:H on silicon substrate. (C) 2008 Elsevier B.V. All rights reserved.

Item Type:Journal article
Keywords:Diamond-like carbon; Chemical vapour deposition; Raman spectroscopy; Electrical properties
Faculties and Schools:Faculty of Computing & Engineering
Faculty of Computing & Engineering > School of Engineering
Research Institutes and Groups:Engineering Research Institute
Engineering Research Institute > Nanotechnology & Integrated BioEngineering Centre (NIBEC)
ID Code:353
Deposited By: Mrs Ann Blair
Deposited On:23 Oct 2009 10:06
Last Modified:07 Apr 2014 10:56

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